參數(shù)資料
型號: BU4522AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率晶體管)
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁數(shù): 5/7頁
文件大小: 70K
代理商: BU4522AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
Fig.13. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.14. Transient thermal impedance.
Fig.15. Test Circuit RBSOA.
Fig.16. Reverse bias safe operating area. T
j
T
jmax
Fig.17. I
during normal running vs. frequency of
operation for optimum performance
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2522AF
0
30
20
10
0
500
1000
1500
VCE / V
IC / A
1.0E-07
1.0E-05
1.0E-03
t / s
1.0E-01
1.0E-01
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
Zth / (K/W)
BU4522AF
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
100
0
2
4
6
8
10
Horizontal frequency (kHz)
Ic(sat) (A)
10
30
50
70
90
1
3
5
7
9
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
December 1997
5
Rev 1.000
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