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參數(shù)資料
| 型號： | BU4525AF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 42K |
| 代理商： | BU4525AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
9.0
7.0
0.4
0.15
MAX.
1500
800
12
30
45
3.0
-
-
0.55
-
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
hs
≤
25 C
I
= 9.0 A; I
B
= 2.25 A
f = 16 kHz
f = 70 kHz
I
Csat
= 9.0 A;f = 16 kHz
I
Csat
= 7.0 A;f = 70 kHz
t
f
Fall time
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
2
3
case
b
c
e
1
Turn-off current.
October 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4525AL | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525AW | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525AX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525DF | Silicon Diffused Power Transistor |
| BU4525DL | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4525AL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
| BU4525DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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