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參數(shù)資料
| 型號(hào)： | BU4522AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率晶體管) |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BU4522AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
7
6
285
170
MAX.
1500
800
10
25
45
3.0
-
-
400
230
UNIT
V
V
A
A
W
V
A
A
ns
ns
T
hs
≤
25 C
I
= 7 A; I
B
= 1.75 A
f = 16 kHz
f = 64 kHz
I
Csat
= 7 A; f = 16 kHz
I
Csat
= 6 A; f = 64 kHz
t
f
Fall time
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
10
25
6
9
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
case
1 2 3
b
c
e
1
Turn-off current.
December 1997
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4522DF | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BU4525AF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525AL | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525AW | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4525AX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4522DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4522DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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