參數(shù)資料
型號(hào): BU2725DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 64K
代理商: BU2725DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
Fig.9. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs
)
Fig.10. Transient thermal impedance.
Z
th
j-hs
= f(t); parameter D = t
p
/T
Fig.11. Test Circuit RBSOA.
V
= 150 V; -V
= 1 - 4 V;
L
C
= 1 mH; V
= 1500 V; L
= 0.5 - 2
μ
H;
C
FB
= 1 - 3 nF; I
B(end)
= 0.8 - 4 A
Fig.12. Reverse bias safe operating area. T
j
T
jmax
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
1E-06
1E-04
1E-02
t / s
1E+00
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
D
t
D = 0
0.02
0.05
0.1
0.2
0.5
100
1000
1700
0
5
10
15
20
25
30
35
VCE / V
IC / A
BU2727A/AF/D/DF
Area where
fails occur
September 1997
5
Rev 1.100
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