參數(shù)資料
型號(hào): BU2725DF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 4/7頁
文件大小: 64K
代理商: BU2725DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
Fig.5. DC current gain. h
FE
= f (I
C
)
Parameter T
(Low and high gain)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.8. Limit storage and fall time.
t
s
= f (I
B
); tf = f (I
B
); T
hs
= 85C; f = 16 kHz
BU2727D/DF
0.01
0.1
1
10
100
1
10
100
hFE
IC / A
VCE = 1 V
Ths = 25 C
Ths = 85 C
0
1
2
3
4
0.6
0.7
0.8
0.9
1
VBEsat / V
BU2727D/DF
IB / A
IC = 6 A
4 A
Ths = 85 C
Ths = 25 C
0.1
1
10
100
0.01
0.1
1
10
BU2727D/DF
VCEsat / V
Ths = 85 C
Ths = 25 C
IC/IB = 12
IC/IB = 5
IC / A
0
1
2
3
4
0
1
2
3
4
5
6
7
8
9
10
IB / A
ts/tf/ us
BU2527AFX,DFX
September 1997
4
Rev 1.100
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