- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369549 > BU2522AW (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BU2522AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 75K |
| 代理商： | BU2522AW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.25
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
0.25
-
-
mA
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
5.0
1.3
-
8
V
V
10
7
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 6.0 A; L
C
= 170
μ
H;
C
fb
= 5.4 nF;
I
= 0.7 A;L
B
= 0.6
μ
H;-V
BB
= 2 V;
(-dI
B/
dt = 3.33A/
μ
s)
TYP.
115
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
1.7
0.12
2.0
0.25
μ
s
μ
s
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU2522AX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BUK454-200B | PowerMOS transistor |
| BU2522A | Silicon Diffused Power Transistor |
| BU2522 | Silicon Diffused Power Transistor |
| BU2522DF | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2522AX | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU2522DF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2522DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2523 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2523AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。