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參數(shù)資料
| 型號： | BTW68N1200 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SURGE CAPABILITY |
| 中文描述： | 高浪涌能力 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 80K |
| 代理商： | BTW68N1200 |
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
Fig.9 :
versus number of cycles.
Non repetitive surge peak on-state current
Fig.5
temperature (BTW 68).
:
Average
on-state
current
versus
case
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0.01
0.10
1.00
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7 :
Relative variation of thermal impedance versus
pulse duration.
Fig.6
temperature (BTW 68 N).
:
Average
on-state
current
versus
case
Fig.10 :
Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
corresponding value of I2t.
:
t
≤
10
ms,
and
BTW 68 (N)
4/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTW68N-1200 | HIGH SURGE CAPABILITY |
| BTW68N600 | HIGH SURGE CAPABILITY |
| BTW68N-600 | HIGH SURGE CAPABILITY |
| BTW68N800 | HIGH SURGE CAPABILITY |
| BTW68N-800 | HIGH SURGE CAPABILITY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTW68N-1200 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW68N600 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW68N-600 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW68N800 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW68N-800 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
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