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參數(shù)資料
| 型號： | BTW68N-1200 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH SURGE CAPABILITY |
| 中文描述： | 高浪涌能力 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | BTW68N-1200 |
BTW 68 (N)
March 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
°
conduction angle)
BTW 68
BTW 68 N
Tc=80
°
C
Tc=85
°
C
30
35
A
IT(AV)
Average
conduction angle,single phase circuit)
on-state
current
(180
°
BTW 68
BTW 68 N
Tc=80
°
C
Tc=85
°
C
19
22
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp=8.3 ms
420
A
tp=10 ms
400
I2t
I2t value
tp=10 ms
800
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 100 mA
diG/dt = 1 A/
μ
s
100
A/
μ
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at
from case
4.5 mm
230
°
C
TOP 3
(Plastic)
K
A
G
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITYAND RELIABILITY
.
BTW68 Serie :
INSULATED VOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTW 68
BTW 68 / BTW 68 N
Unit
200
400
600
800
1000
1200
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
200
400
600
800
1000
1200
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
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| BU208D | Strain Relief RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
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| BTW68N600 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
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| BTW68N-800 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
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