參數資料
型號: BTW68N1200
廠商: 意法半導體
英文描述: HIGH SURGE CAPABILITY
中文描述: 高浪涌能力
文件頁數: 3/5頁
文件大?。?/td> 80K
代理商: BTW68N1200
Fig.3 :
Maximum average power dissipation versus
average on-state current (BTW 68 N).
Fig.4 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 68 N).
Fig.1 :
Maximum average power dissipation versus
average on-state current (BTW 68).
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 68).
Package
IT(RMS)
A
30
VDRM/ VRRM
V
200
400
600
800
1000
1200
600
800
1000
1200
Sensitivity Specification
BTW
X
X
X
X
X
X
X
X
X
X
BTW 68
(Insulated)
BTW 68 N
(Uninsulated)
35
BTW 68 (N)
3/5
相關PDF資料
PDF描述
BTW68N-1200 HIGH SURGE CAPABILITY
BTW68N600 HIGH SURGE CAPABILITY
BTW68N-600 HIGH SURGE CAPABILITY
BTW68N800 HIGH SURGE CAPABILITY
BTW68N-800 HIGH SURGE CAPABILITY
相關代理商/技術參數
參數描述
BTW68N-1200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY
BTW68N600 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY
BTW68N-600 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY
BTW68N800 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY
BTW68N-800 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY