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參數(shù)資料
| 型號(hào)： | BTS650PE3230 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動(dòng) |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 236K |
| 代理商： | BTS650PE3230 |
Data Sheet BTS650P
Infineon Technologies AG
Page 9
2000-Mar-24
Overvoltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
120
nominal. Note that when overvoltage exceeds 71
V
typ.
a voltage above 5V can occur between IS and GND, if
R
V
, V
Z,VIS
are not used.
typ ,
V
Z,IN
=
V
Z,IS
=
66
V
typ.,
R
IS
=
1
k
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
R
V
battery protection in applications with
V
bb
above
16
V
18)
; recommended value: R
1
k
R
IS
=
1
k nominal. Add
R
IN
for reverse
IN
+ R
IS
+R
V
=
0.1A
|
V
bb
| - 12V if D
S
is
0.1A
|
V
bb
| - 12V if D
S
is not used (or R
used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through
R
IS
and
R
V
.
IN
=
V
bb
disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (
V
ZL
<
72 V or
V
Zb
<
30 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
Vbb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
Vbb
V
Zb
Note that there is no reverse battery protection when
using a diode without additional Z-diode V
ZL
, V
Zb
.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads R
L
connected to the same
switch and eliminates the need of clamping circuit:
PROFET
V
IN
OUT
IS
bb
Vbb
R
L
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