參數(shù)資料
型號(hào): BTS650PE3230
元件分類(lèi): TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 單外設(shè)驅(qū)動(dòng)
文件頁(yè)數(shù): 1/16頁(yè)
文件大?。?/td> 236K
代理商: BTS650PE3230
Data Sheet BTS650P
Infineon Technologies AG
Page 1of 16
2000-Mar-24
Smart Highside High Current Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
1
)
Low ohmic inverse current operation
Reversave
(Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of
V
bb
protection
2
)
E
lectro
s
tatic
d
ischarge (
ESD
) protection
Reversave
Application
Power switch with current sense diagnostic
feedback for 12
V and 24
V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and
discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ Vbb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
RIS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
Rbb
V
IN
1
)
With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limtation
I
L(SC)
Current sense ratio
V
bb(AZ)
V
ON(CL)
V
bb(on)
R
ON
I
L(ISO)
62
42
V
V
V
5.0
...
34
6.0
m
70
130
14 000
A
A
I
L :
I
IS
TO-220AB/7
1
7
Standard
1
7
SMD
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