參數(shù)資料
型號(hào)： BTS650PE3180A
元件分類(lèi)： TVS-瞬態(tài)抑制二極管
英文描述： Transient Voltage Suppressor Diodes
中文描述： 單外設(shè)驅(qū)動(dòng)
文件頁(yè)數(shù)： 5/16頁(yè)
文件大?。?/td> 236K
代理商： BTS650PE3180A
Data Sheet BTS650P
Infineon Technologies AG
Page 5
2000-Mar-24
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Protection Functions
Short circuit current limit
(Tab to pins 1,2,6,7)
16)
V
ON
=
12
V, time until shutdown max. 350
s
T
c
=-40°C:
T
c
=25°C:
T
c
=+150°C:
I
L(SC)
I
L(SC)
I
L(SC)
--
--
65
110
130
115
--
180
--
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30 s
Output clamp
17
)
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
t
d(SC)
80
--
350
s
I
L
= 40 mA:
-
V
OUT(CL)
14
16.5
20
V
V
ON(CL)
39
42
47
V
V
ON(SC)
T
jt
T
jt
--
6
--
--
--
--
V
150
°C
K
--
10
Reverse Battery
Reverse battery voltage
18
)
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
Integrated resistor in V
bb
line
-
V
bb
R
ON(rev)
--
--
--
32
7.0
12.3
V
T
j
=
25
°C:
T
j
=
150
°C:
5.4
8.9
m
R
bb
--
120
--
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such condition.
17
)This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
is clamped to V
- V
at inductive load switch off.
18
)The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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