參數(shù)資料
型號: BTS650PE3180
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 單外設(shè)驅(qū)動
文件頁數(shù): 7/16頁
文件大?。?/td> 236K
代理商: BTS650PE3180
Data Sheet BTS650P
Infineon Technologies AG
Page 7
2000-Mar-24
Truth Table
Input
current
level
L
H
Output
Current
Sense
IIS
0
nominal
Remark
level
L
H
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
bb
Open load
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
H
H
I
IS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
0
0
0
0
0
<nominal
22
)
0
0
0
Z
23
)
H
L
Negative output
voltage clamp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
22
)Low ohmic short to
V
may reduce the output current
I
and can thus be detected via the sense current
I
IS
.
23
)Power Transistor "OFF", potential defined by external impedance.
Terms
PROFET
V
IN
IS
OUT
bb
V
IN
I
IS
I
IN
Vbb
Ibb
IL
V
OUT
V
ON
3
5
4
1,2,6,7
R
IS
V
IS
V
bIN
R
IN
D
S
V
bIS
Two or more devices can easily be connected in
parallel to increase load current capability.
R
ON
measurement layout
Sense
contacts
bb
t
t
Out Force
contacts
(both out
pins parallel)
l
5.5mm
Typical R
ON
for SMD version is about 0.2 m
than straight leads due to l 2 mm
less
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