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參數(shù)資料
| 型號： | BTS650PE3180 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動(dòng) |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 236K |
| 代理商： | BTS650PE3180 |
Data Sheet BTS650P
Infineon Technologies AG
Page 5
2000-Mar-24
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Protection Functions
Short circuit current limit
(Tab to pins 1,2,6,7)
16)
V
ON
=
12
V, time until shutdown max. 350
s
T
c
=-40°C:
T
c
=25°C:
T
c
=+150°C:
I
L(SC)
I
L(SC)
I
L(SC)
--
--
65
110
130
115
--
180
--
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30 s
Output clamp
17
)
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
t
d(SC)
80
--
350
s
I
L
= 40 mA:
-
V
OUT(CL)
14
16.5
20
V
V
ON(CL)
39
42
47
V
V
ON(SC)
T
jt
T
jt
--
6
--
--
--
--
V
150
°C
K
--
10
Reverse Battery
Reverse battery voltage
18
)
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
Integrated resistor in V
bb
line
-
V
bb
R
ON(rev)
--
--
--
32
7.0
12.3
V
T
j
=
25
°C:
T
j
=
150
°C:
5.4
8.9
m
R
bb
--
120
--
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such condition.
17
)This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
is clamped to V
- V
at inductive load switch off.
18
)The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS650PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS650PE3180ANT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 13.6A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS650PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS650PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 13.6A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS650PE3230 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
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