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參數(shù)資料
| 型號： | BSP106 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | INDUCTOR TOROID W/HDR 75UH 15% |
| 中文描述： | 425 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BSP106 |
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP106
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I
D
= 10
μ
A
V
GS
= 0
V
DS
= 48 V
V
GS
= 0
V
DS
= 25 V
V
GS
= 0
V
DS
= 0
±
V
GS
= 15 V
I
D
= 1 mA
V
GS
= V
DS
I
D
= 200 mA
V
GS
= 10 V
I
D
= 200 mA
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
drain-source breakdown voltage
60
90
V
I
DSS
drain-source leakage current
1
μ
A
0.5
μ
A
±
I
GSS
gate-source leakage current
10
nA
V
GS(th)
gate-source threshold voltage
0.8
3
V
R
DS(on)
drain-source on-resistance
2.5
4
Y
fs
transfer admittance
100
200
mS
C
iss
input capacitance
25
40
pF
C
oss
output capacitance
22
30
pF
C
rss
feedback capacitance
6
10
pF
Switching times (see Figs
2
and
3
)
t
on
turn-on time
I
D
= 200 mA
V
DD
= 50 V
V
GS
= 0 to 10 V
I
D
= 200 mA
V
DD
= 50 V
V
GS
= 0 to 10
2
5
ns
t
off
turn-off time
10
15
ns
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相關代理商/技術參數(shù) |
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|---|---|
| BSP106T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | SOT-223 |
| BSP107 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BSP107T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 200MA I(D) | SOT-223 |
| BSP108 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BSP108T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-223 |
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