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參數(shù)資料
| 型號： | BS250P |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 230 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 48K |
| 代理商： | BS250P |
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
*
45 Volt V
DS
*
R
DS(on)
=14
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-45
V
Continuous Drain Current at T
amb
=25°C
I
D
-230
mA
Pulsed Drain Current
I
DM
-3
A
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
700
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45
V
I
D
=-100
μ
A, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
-1
-3.5
V
I
D
=-1mA, V
DS
=V
GS
Gate Body Leakage
I
GSS
-20
nA
VGS=-15V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
-500
nA
V
GS
=0V, V
DS
=-25V
Static Drain-Source
on-State Resistance (1)
R
DS(on)
14
V
GS
=-10V, I
D
=-200mA
Forward
Transconductance (1)(2)
g
fs
150
mS
V
DS
=-10V, I
D
=-200mA
Input Capacitance (2)
C
iss
60
pF
V
=0V, V
DS
=-10V
f=1MHz
Turn-On Time (2)(3)
t
(on)
20
ns
V
DD
≈
-25V, I
D
=-500mA
Turn-Off Time (2)(3)
t
(off)
20
ns
(1) Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2% (2) Sample test
(3) Switching times measured with a 50
source impedance and <5ns rise time on a pulse generator
BS250P
3-28
D
E-Line
TO92 Compatible
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