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參數(shù)資料
| 型號(hào)： | BS616LV4016DC-55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256 × 16位 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 265K |
| 代理商： | BS616LV4016DC-55 |
Revision 1.1
Jan. 2004
1
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV4016EC
BS616LV4016EI
R0201-BS616LV4016
POWER DISSIPATION
STANDBY
( I
SPEED
(
ns )
CC
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
3.0V
3.0V
PKG
TYPE
BS616LV4016DC
BS616LV4016EC
BS616LV4016AC
BS616LV4016DI
BS616LV4016EI
BS616LV4016AI
DICE
TSOP2-44
BGA-48-0608
DICE
TSOP2-44
BGA-48-0608
+0
O
C to +70
O
C
2.4V
~ 3.6V
55 / 70
6.0uA
25mA
-40
O
C to +85
O
C
2.4V
~ 3.6V
55 / 70
8.0uA
27mA
Very Low Power/Voltage CMOS SRAM
256K X 16 bit
Wide Vcc operation voltage :
2.4V
~ 3.6V
Very low power consumption :
Vcc = 3.0V C-grade: 25mA (@55ns) operating current
I -grade: 27mA (@55ns) operating current
C-grade: 17mA (@70ns) operating current
I -grade: 18mA (@70ns) operating current
0.45uA (Typ.)
CMOS standby current
High speed access time :
-55 55ns (Max.) at Vcc = 2.7~3.6V / 85
o
C
-70 70ns (Max.) at Vcc = 2.4~3.6V / 85
o
C
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as
1.5V
The BS616LV4016 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of
2.4V
to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA
at
3.0V/25
o
C
and maximum access time of
55ns
at
2.7V/85
o
C
.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
DESCRIPTION
FEATURES
Row
Decoder
Memory Array
2048 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
A9 A8 A7
Data
Input
Buffer
Control
Gnd
Vcc
OE
UB
WE
CE
DQ15
DQ0
A0
A17
A16
A13
A12
A14
A15
A1
A2
16
16
16
16
14
128
2048
BLOCK DIAGRAM
2048
22
A10
A6
A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
.
.
.
.
LB
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
BS616LV4016
A4
BSI
Operating
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin
Vcc =
Vcc =
17mA
18mA
55ns
70ns
55ns:
2.7~3.6V
70ns:
2.4~3.6V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS616LV8010FC-70 | FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes |
| BS616LV8017EI55 | Very Low Power CMOS SRAM 512K X 16 bit |
| BS616LV8017EI70 | Very Low Power CMOS SRAM 512K X 16 bit |
| BS616LV8017FC55 | Very Low Power CMOS SRAM 512K X 16 bit |
| BS616LV8017FC70 | Very Low Power CMOS SRAM 512K X 16 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS616LV4016DC-70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| BS616LV4016DCG55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| BS616LV4016DCG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| BS616LV4016DCP55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| BS616LV4016DCP70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
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