參數(shù)資料
型號(hào)： BS616LV8010FC-70
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes
中文描述： 非常低功率/電壓CMOS SRAM的為512k × 16位
文件頁數(shù)： 1/9頁
文件大?。?/td> 272K
代理商： BS616LV8010FC-70
Revision 1.1
Jan.
2004
1
R0201-BS616LV8010
Very Low Power/Voltage CMOS SRAM
512K X 16 bit
(Single CE Pin)
The BS616LV8010 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 1.5uA at 3V/25
o
C and maximum access time of 55ns at 3V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV8010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8010 is available in 48B BGA and 44L TSOP2 packages.
DESCRIPTION
FEATURES
Vcc operation voltage : 2.7~3.6V
Very low power consumption :
Vcc = 3.0V C-grade: 30mA (@55ns) operating current
I -grade: 31mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
1.5uA (Typ.) CMOS standby current
High speed access time :
-55 55ns
-70 70ns
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin
BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
BS616LV8010
1
5
LB
OE
A0
A1
A2
NC
D8
UB
A3
A4
CE
D0
D9
D10
A5
A6
D1
D2
VSS
D11
A17
A7
D3
VCC
VCC
D12
A16
D4
VSS
D14
D13
A14
A 5
D5
D6
D15
NC
.
A12
A13
WE
D7
A 8
1
A8
A9
A10
A11
NC
A
B
C
D
E
F
G
H
1
2
3
4
6
VSS
Row
Decoder
Memory Array
2048 x 4096
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
A9 A8 A7
Data
Input
Buffer
Control
Vss
Vcc
OE
UB
WE
CE
D15
D0
A0
A17
A16
A13
A12
A14
A15
A1
A2
16
16
16
16
16
256
4096
2048
22
A10
A6
A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
.
.
.
.
LB
A4
A18
48-Ball CSP top View
BSI
POWER DISSIPATION
STANDBY
( I
CCSB1
, Max )
SPEED
( ns )
Operating
( I
CC
, Max )
Vcc=3V
55ns
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3V
Vcc=3V
70ns
PKG TYPE
BS616LV8010EC
BS616LV8010FC
BS616LV8010EI
BS616LV8010FI
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
+0
O
C to +70
O
C
2.7V ~ 3.6V
55 / 70
5uA
30mA
24mA
-40
O
C to +85
O
C
2.7V ~ 3.6V
55 / 70
10uA
31mA
25mA
55ns : 3.0~3.6V
70ns : 2.7~3.6V
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE
A18
A17
A16
A15
A14
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV8010EC
BS616LV8010EI
相關(guān)PDF資料
PDF描述
BS616LV8017EI55 Very Low Power CMOS SRAM 512K X 16 bit
BS616LV8017EI70 Very Low Power CMOS SRAM 512K X 16 bit
BS616LV8017FC55 Very Low Power CMOS SRAM 512K X 16 bit
BS616LV8017FC70 Very Low Power CMOS SRAM 512K X 16 bit
BS616LV8017FI55 Very Low Power CMOS SRAM 512K X 16 bit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS616LV8010FCG55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FCG70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FCP55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FCP70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616LV8010FI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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