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參數(shù)資料
| 型號： | BS250F |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 90 mA, 45 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | BS250F |
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
PARTMARKING DETAIL MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-45
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
-90
mA
-1.6
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-45
-70
V
I
D
=-100
μ
A, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=-15V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5.
μ
A
V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
9
14
V
GS
=-10V,I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
90
mS
V
DS
=-10V,I
D
=-200mA
Input Capacitance (2)
C
iss
25
pF
V
=-10V, V
GS
=0V,
f=1MHz
Turn-On Delay Time (2)(3)
t
d(on)
10
ns
V
DD
≈
-25V, I
D
=-200mA
Rise Time (2)(3)
t
r
10
ns
Turn-Off Delay Time (2)(3)
t
d(off)
10
ns
Fall Time (2)(3)
t
f
10
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
BS250F
D
G
S
SOT23
3 - 55
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