- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381596 > BS170P (ZETEX PLC) RP08 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 8 Watts Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 87% PDF資料下載
參數(shù)資料
| 型號： | BS170P |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RP08 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 8 Watts Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 87% |
| 中文描述： | 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BS170P |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=5
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-S ource Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25°C
I
D
270
mA
Pulsed Drain Current
I
DM
3
A
Gate-Source Voltage
V
GS
±
20
V
Power Dissipation at T
amb
=25°C
P
tot
625
mW
Operating and S torage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
Drain-S ource
Breakdown Voltage
BV
DS S
60
V
I
D
=100
μ
A, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS (th)
0.8
3
V
I
D
=1mA, V
DS
=V
GS
Gate Body Leakage
I
GS S
10
nA
VGS=15V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DS S
0.5
μ
A
V
GS
=0V, V
DS
=25V
Static Drain-Source
on-State Resistance (1)
R
DS (on)
5
V
GS
=10V, I
D
=200mA
Forward
Transconductance (1)(2)
g
fs
200
mS
V
DS
=10V, I
D
=200mA
Input Capacitance (2)
C
iss
60
pF
V
=0V, V
DS
=10V
f=1MHz
Turn-On Time (2)(3)
t
(on)
10
ns
V
DD
≈
15V, I
D
=600mA
Turn-Off Time (2)(3)
t
(off)
10
ns
(1) Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2% (2) Sample test
(3) Switching times measured with a 50
source impedance and <5ns rise time on a pulse generator
BS170P
3-27
D
E-Line
TO92 Compatible
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS250F | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| BS250P | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| BS2 | SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR |
| BS616LV4016AC-55 | Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| BS616LV4016AI-55 | Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS170P | 制造商:Diodes Incorporated 功能描述:MOSFET N E-LINE |
| BS170PSTOA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170PSTOB | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170PSTZ | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170RL | 制造商:Motorola Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。