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參數(shù)資料
| 型號： | BR34L02FV-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 256? bit Electrically Erasable PROM |
| 中文描述： | 256？位電可擦除可編程ROM |
| 文件頁數(shù)： | 17/25頁 |
| 文件大?。?/td> | 529K |
| 代理商： | BR34L02FV-W |
BR34L02FV-W
Memory ICs
6) I/O circuit
Pull up resister of SDA pin
The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R
PU
) properly,
by considering V
IL
, I
L
characteristics of a controller which control the device and V
OH
, I
OL
characteristics of the
device. If large R
PU
is chosen, clock frequency need to be slow.
In case of small R
PU
, the operating current increases.
Maximum of R
PU
Maximum of R
PU
is determined by following factor.
c
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS) must be less than T
R
.
And the other timing must keep the conditions of AC spec.
d
When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I
L
) of the all devices
connected to the bus and R
PU
must be enough higher than input HIGH level of a controller and the device,
including noise margin 0.2V
CC
.
Rev.A
17/24
A
IL
IL
MICRO
COMPUTER
BR24LXX
SDA PIN
R
PU
THE CAPACITANCE OF
BUS LINE (CBUS)
V
CC
I
L
R
PU
0.2V
CC
≥
V
IH
R
PU
≤
0.8V
CC
V
IH
IL
R
PU
≤
0.8
×
3
0.7
×
3
10
×
10
6
≤
300 [k
]
Examples : When V
CC
=
3V I
L
=
10
μ
A V
IH
=
0.7V
CC
According to
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BR34L02FV-W_09 | 制造商:ROHM 制造商全稱:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-WE2 | 功能描述:電可擦除可編程只讀存儲器 SRL 256X8 BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR34L02-W | 制造商:ROHM 制造商全稱:Rohm 功能描述:2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module |
| BR34-UPC | 制造商:Thomas & Betts 功能描述:GROUND ROD CLAMP 3/4 BRONZE |
| BR35 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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