參數(shù)資料
型號: BR34L02FV-W
廠商: Rohm CO.,LTD.
英文描述: 256? bit Electrically Erasable PROM
中文描述: 256?位電可擦除可編程ROM
文件頁數(shù): 12/25頁
文件大?。?/td> 529K
代理商: BR34L02FV-W
BR34L02FV-W
Memory ICs
z
Sequential read
Rev.A
12/24
S
T
A
R
T
SLAVE
ADDRESS
R
/
W
A
C
K
A
C
K
A
C
K
A
C
K
R
E
A
D
DATA(n)
DATA(n
+
x)
SDA
LINE
1
1
0
0 A2
A1 A0
D7
D7
D0
D0
S
T
O
P
Fig.16 SEQUENTIAL READ CYCLE TIMING
(Current Read)
If an Acknowledge is detected, and no STOP condition is generated by the master (
μ
-COM), the device will continue to
transmit the data.
[
It can transmit all data (2kbit 256word)
]
If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition
before returning to the standby mode.
The Sequential Read operation can be performed with both Current Read and Random Read.
NOTE) If an Acknowledge is detected with “Low” level, not “High” level, command will become Sequential Read. So the
device transmits the next data, Read is not terminated. In the case of terminating Read, input Acknowledge with
“High” always, then input stop condition.
z
Write protect
SDA
LINE
WP
S
T
A
R
T
SLAVE
ADDRESS
0 1
0
1
R
/
W
W
R
I
T
E
A
C
K
A
C
K
DATA
S
T
O
P
Fig.17 WRITE PROTECT CYCLE TIMING
A
C
K
WORD
ADDRESS
A0
A1
A2
Using this command, writing is inhibited in lower half area. (00h to 7Fh address) If Write Protect Command is executed,
cannot cancel the protection permanently. (Onetime Rom)
This Command is cancelled, if Write Protect Command is already executed.
During this command, please be left WP unconnected or connect WP to GND.
This command need the period of t
WR
after stop condition just like Byte or Page Write command. During the t
WR
, next
command is ignored.
相關(guān)PDF資料
PDF描述
BR354 SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR356 SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR358 SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR3505 ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85%
BR351 SINGLE-PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BR34L02FV-W_09 制造商:ROHM 制造商全稱:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory
BR34L02FV-WE2 功能描述:電可擦除可編程只讀存儲器 SRL 256X8 BIT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
BR34L02-W 制造商:ROHM 制造商全稱:Rohm 功能描述:2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BR34-UPC 制造商:Thomas & Betts 功能描述:GROUND ROD CLAMP 3/4 BRONZE
BR35 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER