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參數(shù)資料
| 型號： | BR24L04F-W |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 512】8 bit electrically erasable PROM |
| 中文描述： | 512】8位電可擦除可編程ROM |
| 文件頁數(shù)： | 10/25頁 |
| 文件大?。?/td> | 388K |
| 代理商： | BR24L04F-W |
BR24L04-W / BR24L04F-W / BR24L04FJ-W
Memory ICs
BR24L04FV-W / BR24L04FVM-W
z
Byte write
10/25
SDA
LINE
WP
S
T
A
R
T
SLAVE
ADDRESS
1 0
0
1
R
/
W
W
R
I
T
E
A
C
K
A
C
K
D7
DATA
D0
S
T
O
P
Fig.8 BYTE WRITE CYCLE TIMING
A
C
K
WORD
ADDRESS
WA
0
WA
7
PS
A1
A2
By using this command, the data is programmed into the indicated word address.
When the master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory
array.
z
Page write
Fig.9 PAGE WRITE CYCLE TIMING
SDA
LINE
WP
SLAVE
ADDRESS
1 0
0
1
R
/
W
A
C
K
A
C
K
A
C
K
D7
DATA (n)
D0
DATA (n
+
15)
D0
WORD
ADDRESS (n)
A
C
K
WA
0
WA
7
PS
A1
A2
S
T
A
R
T
W
R
I
T
E
S
T
O
P
This device is capable of sixteen byte Page Write operation.
When two or more byte data are inputted, the four low order address bits are internally incremented by one after the
receipt of each word. The five higher order bits of the address (PS WA7 to WA4) remain constant.
If the master transmits more than sixteen words, prior to generating the STOP condition, the address counter will
“roll over”, and the previous transmitted data will be overwritten.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR24L04FJ-W | 512】8 bit electrically erasable PROM |
| BR24L04FV-W | 512】8 bit electrically erasable PROM |
| BR24L04FVM-W | 512】8 bit electrically erasable PROM |
| BR2505W | RO Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 24V; Power: 1W; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Custom Solutions Available; Efficiency to 85% |
| BR2510W | ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR24L04F-WE2 | 功能描述:電可擦除可編程只讀存儲器 2 WIRE SERIAL 4K (I2 C BUS TYPE) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24L04F-WTR | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24L04NUX-WE2 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24L04NUX-WTR | 功能描述:IC EEPROM 4KBIT 100KHZ VSON8 RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| BR24L04-W | 功能描述:IC EEPROM 4KBIT 400KHZ 8DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 線串行 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOP-J 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1380 (CN2011-ZH PDF) 其它名稱:BR93L86FJ-WE2DKR |
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