參數(shù)資料
型號(hào)： BR2510W
廠商： Electronics Industry Public Company Limited
英文描述： ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85%
中文描述： 硅橋式整流器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 429K
代理商： BR2510W
TECHNICAL SPECIFICATION
S OF
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
C ambient temperature unless otherwise specified.
BR2505W
THRU
BR2510W
BR-25W
RECTIFIER SPECIALISTS
R
DC COMPONENTS CO., LTD.
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation
* Surge overload ratings-400 Amperes
* Low forward voltage drop
* Case: Molded plastic with heatsink
* Epoxy: UL 94V-0 rate flame retardant
*Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: As marked
* Mounting position: Any
* Weight: 30 grams
MECHANICAL DATA
TYP
METAL HEAT SINK
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
SYMBOL
V
RRM
V
DC
I
O
I
FSM
V
RMS
Volts
Volts
Amps
25
400
UNITS
Maximum Average Forward Rectified Output Current at Tc = 55
o
C
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
50
200
400
100
600
800
1000
Volts
Amps
DC Blocking Voltage per element
I
2
t Rating for Fusing (t<8.3ms)
V
F
I
R
1.1
500
uAmps
Maximum DC Reverse Current at Rated
Maximum Forward Voltage Drop per element at 12.5A DC
Volts
10
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
0
C
NOTES : 1.
Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Case per leg.
I
2
t
374
A
2
Sec
Typical Junction Capacitance ( Note1)
C
J
300
pF
Typical Thermal Resistance (Note 2)
R
θ
JC
2.5
0
C
/W
BR2505W BR251W BR252W BR254W BR256W BR258W BR2510W
@T
A
= 25
o
C
@T
A
= 100
o
C
250
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相關(guān)PDF資料
PDF描述
BR2510W TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR251W TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR252W ROM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 15V; Power: 1W; Micro Size SIP4 Package; 3kVDC Isolation; Approved for Medical Applications; Industry Standard Pinout; Optional Continuous Short Circuit Protected; UL94V-0 Package Material; Efficiency to 85%
BR254W TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR256W TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BR2510W-G 功能描述:橋式整流器 DIODE RECT BRIDGE 25A 1000V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
BR2512 功能描述:橋式整流器 25A 1200V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
BR25160-10TU-1.8 功能描述:電可擦除可編程只讀存儲(chǔ)器 SPI 16K BIT 2K X 8 2.5V/3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
BR25160-10TU-2.7 功能描述:電可擦除可編程只讀存儲(chǔ)器 SPI 16K BIT 2K X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
BR25160N-10SU-1.8 功能描述:電可擦除可編程只讀存儲(chǔ)器 SPI 16K-BIT 2KX8 2.5V/3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
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