參數(shù)資料
型號: BR24C21F
廠商: Rohm CO.,LTD.
英文描述: ID ROM for CRT display
中文描述: 身份證光盤用于CRT顯示器
文件頁數(shù): 7/12頁
文件大?。?/td> 671K
代理商: BR24C21F
BR24C21 / BR24C21F / BR24C21FJ / BR24C21FV
Memory ICs
2) Bi-directional Mode
START CONDITION
All commands are proceeded by the start condition, which is a HIGH to LOW transition of SDA when SCL is HIGH.
The BR24C21, BR24C21F, BR24C21FJ and BR24C21FV continuously monitors the SDA and SCL lines for the start
condition and will not respond to any command until this condition has been met.
STOP CONDITION
All communications must be terminated by a stop condition, which is a LOW to HIGH transition of SDA when SCL is
HIGH.
The stop condition initiates internal write cycle to write the data into memory array after write sequence.
The stop condition is also used to place the device into the standby power mode after read sequence.
A stop condition can only be issued after the transmitting device has released the bus.
DEVICE ADDRESSING
Following a START condition, the master output the device address of the slave to be accessed. The most significant
four bits of the slave address are the “device type indentifier”, For the BR24C21, BR24C21F, BR24C21FJ and
BR24C21FV this is fixed as “1010”.
The next three bits of the slave address are don’t care.
The last bit of the stream determines the operation to be performed. When set to “1”, a read operation is selected ;
when set to “0”, a write operation is selected.
R / W set to “0” ··· WRITE
(This bit also sets to “0” for random read operation)
R / W set to “1” ··· READ
1010
R / W
Don't care
WRITE PROTECT FUNCTION
WRITE ENABLE (VCLK)
When using the BR24C21, BR24C21F, BR24C21FJ and BR24C21FV in the Bi-directional Mode, the VCLK pin can
be used as a write enable pin. Setting VCLK high allows normal write operations, while setting VCLK low prevents
writing to any location in the array. Changing VCLK from high to low during the self-timed program operation will not
halt programming of the device. Setting VCLK low allow the word address setting in random read.
相關(guān)PDF資料
PDF描述
BR24L01AFJ-W 128】8 bit electrically erasable PROM
BR24L01 128】8 bit electrically erasable PROM
BR24L04F-W 512】8 bit electrically erasable PROM
BR24L04FJ-W 512】8 bit electrically erasable PROM
BR24L04FV-W 512】8 bit electrically erasable PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BR24C21F-E2 功能描述:電可擦除可編程只讀存儲器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
BR24C21FJ 制造商:ROHM 制造商全稱:Rohm 功能描述:ID ROM for CRT display
BR24C21FJ-E2 功能描述:IC EEPROM EDID 1K 100KHZ 8-SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 線串行 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOP-J 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1380 (CN2011-ZH PDF) 其它名稱:BR93L86FJ-WE2DKR
BR24C21FV 制造商:ROHM 制造商全稱:Rohm 功能描述:EDID Memory (For display)
BR24C21FV-E2 功能描述:電可擦除可編程只讀存儲器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8