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參數(shù)資料
| 型號(hào)： | BR24C21F |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | ID ROM for CRT display |
| 中文描述： | 身份證光盤用于CRT顯示器 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 671K |
| 代理商： | BR24C21F |
BR24C21 / BR24C21F / BR24C21FJ / BR24C21FV
Memory ICs
RANDOM READ
SLAVE
ADDRESS
SDA
LINE
S
T
A
R
T
1
1
0
0
R
/
W
W
R
I
T
E
Fig.18 RANDOM READ CYCLE TIMING
S
T
O
P
A
C
K
R
E
A
D
DATA(n)
SLAVE
ADDRESS
S
T
A
R
T
R
/
W
A
C
K
1
1
0
0
D7
D0
WA
0
WORD
ADDRESS(n)
A
C
K
WA
6
A
C
K
Random read operation allows the master to access any memory location. This operation involves a two-step
process. First, the master issues a write command which includes the start condition and the slave address field (with
R / W set to “0”) followed by the address of the word to be read. This procedure sets the internal address counter of
the BR24C21, BR24C21F, BR24C21FJ and BR24C21FV to the desired address. After the word address
acknowledge is received by the master, the master immediately reissues a start condition followed by the slave
address field with R / W the set to “1”. The device will respond with an acknowledge and then transmit the 8-data bits
stored at the addressed location. If the master does not acknowledge the transmission but does generate the stop
condition, at this point BR24C21, BR24C21F, BR24C21FJ and BR24C21FV discontinue transmission.
SEQUENTIAL READ
S
T
A
R
T
SLAVE
ADDRESS
R
/
W
A
C
K
A
C
K
A
C
K
A
C
K
R
E
A
D
DATA(n)
DATA(n
+
x)
SDA
LINE
1
1
0
0
D7
D7
D0
D0
S
T
O
P
Fig.19 SEQUENTIAL READ CYCLE TIMING
(Current Read)
During the sequential read operation, the internal address counter of the BR24C21, BR24C21F, BR24C21FJ and
BR24C21FV automatically increments with each acknowledge received ensuring the data from address n will be
followed with the data from n+1. For read operations, all bits of the address counter are incremented allowing the
entire array to be read during a single operation. When the counter reaches the top of the array, it will “roll over” to the
bottom of the array and continue to transmit the data.
The sequential read operation can be performed with both current read and random read.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR24L01AFJ-W | 128】8 bit electrically erasable PROM |
| BR24L01 | 128】8 bit electrically erasable PROM |
| BR24L04F-W | 512】8 bit electrically erasable PROM |
| BR24L04FJ-W | 512】8 bit electrically erasable PROM |
| BR24L04FV-W | 512】8 bit electrically erasable PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR24C21F-E2 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR24C21FJ | 制造商:ROHM 制造商全稱:Rohm 功能描述:ID ROM for CRT display |
| BR24C21FJ-E2 | 功能描述:IC EEPROM EDID 1K 100KHZ 8-SOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 線串行 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOP-J 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1380 (CN2011-ZH PDF) 其它名稱:BR93L86FJ-WE2DKR |
| BR24C21FV | 制造商:ROHM 制造商全稱:Rohm 功能描述:EDID Memory (For display) |
| BR24C21FV-E2 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 I2C 1K BIT 128 X 8 3.3V/5V 8PIN RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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