參數(shù)資料
型號(hào)： bq2012
廠商： Benchmark Technology Group
英文描述： Gas Gauge IC With Slow-Charge Control(Gas Gauge芯片（帶慢充電控制）)
中文描述： 氣體計(jì)IC緩慢充電控制（電量監(jiān)測(cè)計(jì)芯片（帶慢充電控制））
文件頁(yè)數(shù)： 16/20頁(yè)
文件大?。?/td> 188K
代理商： BQ2012
16
bq2012
Absolute Maximum Ratings
Symbol
Parameter
Minimum
Maximum
Unit
Notes
V
CC
All other pins
REF
Relative to V
SS
Relative to V
SS
Relative to V
SS
-0.3
-0.3
-0.3
7.0
7.0
8.5
V
V
V
Current limited by R1 (see Figure 1)
Minimum 100
series resistor should
be used to protect SR in case of a
shorted battery (see the bq2012 appli-
cation note for details).
Commercial
Industrial
V
SR
Relative to V
SS
-0.3
7.0
V
T
OPR
Operating tempera-
ture
0
70
85
°C
°C
-40
Note:
Permanent device damage may occur if
Absolute Maximum Ratings
are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Voltage Thresholds
(TA= TOPR; V = 3.0 to 6.5V)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
V
EDVF
Final empty warning
0.93
0.95
0.97
V
SB
V
EDV1
First empty warning
1.03
1.05
1.07
V
SB
V
SR1
Discharge compensation threshold
-120
-150
-180
mV
SR, V
SR
+ V
OS
(see
note 2)
V
ORD
Overload threshold
-230
-250
-280
mV
SR, V
SR
+ V
OS
V
SRO
SR sense range
-300
-
+2000
mV
SR, V
SR
+ V
OS
V
SRQ
Valid charge
375
-
-
μ
V
V
SR
+ V
OS
(see note 1)
V
SRD
Valid discharge
-
-
-300
μ
V
V
SR
+ V
OS
(see note 1)
V
MCV
Maximum single-cell voltage
2.20
2.25
2.30
V
SB
V
BR
Battery removed/replaced
-
0.1
0.25
V
SB pulled low
2.20
2.25
2.30
V
SB pulled high
Notes:
1.
Default value; value set in DMF register. V
OS
is affected by PC board layout. Proper layout
guidelines should be followed for optimal performance. See “LayoutConsiderations.”
Proper threshold measurements require V
CC
to be more than 1.5V greater than the desired signal
value.
2.
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