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參數(shù)資料
| 型號(hào)： | BPV11F |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 |
| 中文描述： | Photodetector Transistors 15 Degree 150mW |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | BPV11F |
BPV11F
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 03-May-13
2
Document Number: 81505
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
40
80
120
160
200
P
V
T
amb
- Ambient Temperature (°C)
100
80
60
40
20
0
94 8300
R
thJA
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
DC current gain
V
CE
= 5 V, I
C
= 5 mA, E = 0
Collector emitter capacitance
V
CE
= 0 V, f = 1 MHz, E = 0
Collector base capacitance
V
CE
= 0 V, f = 1 MHz, E = 0
Collector light current
E
e
= 1 mW/cm
2
,
= 950 nm, V
CB
= 5 V
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 1 mA
Turn-on time
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Turn-off time
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Cut-off frequency
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
TEST CONDITION
I
C
= 1 mA
V
CE
= 10 V, E = 0
SYMBOL
V
(BR)CEO
I
CEO
h
FE
C
CEO
C
CBO
I
ca
p
0.5
V
CEsat
t
on
t
off
f
c
MIN.
70
TYP.
MAX.
UNIT
V
nA
1
50
450
15
19
9
± 15
930
pF
pF
mA
deg
nm
nm
mV
μs
μs
kHz
3
900 to 980
130
6
5
110
300
94 8249
20
I
C
100
40
60
80
T
amb
- Ambient Temperature (°C)
10
10
1
10
2
10
3
10
4
V
CE
= 10 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20
40
60
80
100
1.6
1.8
= 950 nm
94 8239
T
amb
- Ambient Temperature (°C)
I
c
V
CE
= 5 V
E
= 1 mW/cm
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV11F | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11F_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV20 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPV20F | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV20NFL | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
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