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參數(shù)資料
| 型號： | BPV11F |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor(檢測應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| 中文描述： | 硅npn型光電晶體管（檢測應(yīng)用的高靈敏度npn型外延平面型光晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | BPV11F |
BPV11F
Vishay Telefunken
2 (6)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81505
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
DC Current Gain
Collector Emitter Capacitance
Collector Base Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
h
FE
C
CEO
C
CBO
I
ca
Min
70
Typ
Max
Unit
V
V
CE
= 10 V, E = 0
V
CE
= 5 V, I
C
= 5 mA, E = 0
V
CE
= 0 V, f = 1 MHz, E=0
V
CB
= 0 V, f = 1 MHz, E=0
E
e
=1 mW/cm
2
, =950 nm,
V
CE
=5 V
1
50
nA
450
15
19
9
pF
pF
mA
3
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
±
15
930
deg
nm
nm
mV
p
0.5
900...980
130
E
e
=1 mW/cm
2
, =950 nm,
I
C
=1 mA
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
CEsat
300
t
on
6
s
Turn–Off Time
t
off
5
s
Cut–Off Frequency
f
c
110
kHz
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
40
80
120
160
200
P
t
100
94 8300
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8249
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=10V
Figure 2. Collector Dark Current vs. Ambient Temperature
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PDF描述 |
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| BPV11F | Silicon NPN Phototransistor |
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| BPV11 | Silicon NPN Phototransistor(檢測應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| BPV11 | Silicon NPN Phototransistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV11F | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11F_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV20 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPV20F | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV20NFL | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
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