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參數(shù)資料
| 型號： | BPV10NF |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Silicon PIN Photodiode |
| 中文描述： | 高速硅PIN光電二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BPV10NF |
BPV10NF
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81503
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Test Conditions
I
F
= 50 mA
I
R
= 100 A, E = 0
V
R
= 20 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
, = 870 nm
E
e
= 1 mW/cm
2
, = 870 nm
E
e
= 1 mW/cm
2
, = 870 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
, = 950 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
, = 870 nm,
V
R
= 5 V
V
R
= 5 V, = 870 nm
Symbol
V
F
V
(BR)
I
ro
C
D
V
o
I
k
I
ra
Min
Typ
1
Max
1.3
Unit
V
V
nA
pF
mV
A
A
60
1
11
450
50
55
5
I
ra
30
60
A
Temp. Coefficient of I
ra
TK
Ira
–0.1
%/K
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
s( )
0.55
±
20
940
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/
W
ns
p
0.5
790...1050
70
3x10
–14
3x10
12
= 950 nm
V
R
=20 V, =950 nm
V
R
=20 V, =950 nm
NEP
D
*
Rise Time
V
R
=50 V, R
L
=50 ,
=820 nm
V
R
=50 V, R
L
=50
=820 nm
t
r
2.5
Fall Time
,
t
f
2.5
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8436
V
R
=20V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8621
V
R
=5V
E
e
=1mW/cm
2
=870nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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