參數(shù)資料
型號(hào): BLY90
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 13K
代理商: BLY90
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 100 mA
BV
CEO
I
C
= 100 mA
BV
EBO
I
E
= 25 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
V
---
18
4.0
10
200
C
c
f
T
V
CB
= 15 V
V
CE
= 10 V IC = 6.0 A
f = 1.0 MHz
130
160
pF
MHz
550
G
P
η
C
V
CC
= 12.5 V P
OUT
= 50 W f = 175 MHz
5.0
75
dB
%
NPN SILICON RF POWER TRANSISTOR
BLY90
DESCRIPTION:
The
ASI BLY90
is Designed for
Class A,B and C, 12.5 V High Band
Applications up to 175 MHz.
FEATURES:
Common Emitter
P
G
= 5.0 dB at 50 W/175 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
8.0 A
36 V
18 V
4.0 V
130 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.35 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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