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參數(shù)資料
| 型號(hào)： | BLY92A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 14K |
| 代理商： | BLY92A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25°C
SYMBOL
BV
CBO
I
C
= 200 mA
BV
CES
I
C
= 200 mA
BV
CEO
I
C
= 200 mA
BV
EBO
I
E
= 10 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 200 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
V
V
V
mA
---
65
35
4.0
1.0
5.0
200
C
ob
V
CB
= 30 V
f = 1.0 MHz
15
pF
P
G
η
C
V
CC
= 28 V
P
IN
= 1.0 W
P
OUT
= 10 W f = 175 MHz
10
60
dB
%
NPN SILICON RF POWER TRANSISTOR
BLY92A
DESCRIPTION:
The
ASI BLY92A
is an NPN power transistor
designed for 138-175 MHz VHF communications.
It utilizes emitter ballasting to provide high VSWR
handling capability.
FEATURES:
Common Emitter, 28 V operation
P
G
= 10 dB at 10W/175 MHz
Omnigold
Metalization System
High VSWR capability
MAXIMUM RATINGS
I
C
1.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
13.0 W
T
J
-65 °
O
C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
13.5 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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