參數(shù)資料
型號: BLY91C
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 18K
代理商: BLY91C
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 200 mA
BV
CEO
I
C
= 10 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CE
= 36 V
h
FE
V
CE
= 5.0 V I
C
= 400 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
35
V
4.0
V
1.0
mA
10
100
---
C
OB
V
CB
= 30 V
f = 1.0 MHz
15
pF
P
G
η
C
V
CC
=28 V P
OUT
= 8.0 W f = 175 MHz
12.0
65
13.0
dB
%
NPN SILICON RF POWER TRANSISTOR
BLY91C
DESCRIPTION:
The
ASI BLY91C
is Designed for
28 V Large Signal Class A,B and C
Amplifier Applications up to 175 MHz.
FEATURES INCLUDE:
Emitter Ballasting
Gold Metalization
3/8" SOE
Stud Package
MAXIMUM RATINGS
I
C
1.0 A
V
CE
35 V
V
CB
65 V
P
DISS
20 W @ T
C
= 25 °C
T
J
-65 °C to + 200 °C
T
STG
-65 °C to + 150 °C
θ
JC
8.7 °C/W
PACKAGE STYLE .380" 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
相關PDF資料
PDF描述
BLY92C 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
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