參數(shù)資料
型號: BLW83
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 8/11頁
文件大?。?/td> 79K
代理商: BLW83
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
CE
= 28 V; f
1
= 28,000 MHz; f
2
= 28,001 MHz
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
List of components:
OUTPUT POWER
G
p
η
dt
(%)
I
C
(A)
d
3
d
5
I
C(ZS)
T
h
W
dB
at 30 W P.E.P.
dB
(1)
typ.
30
typ.
30
dB
(1)
<
30
<
30
mA
°
C
25
70
3 to 30 (P.E.P.)
3 to 25 (P.E.P.)
typ. 21
typ. 21
typ. 40
typ. 1,34
25
25
C3
C4
C7
L1
L2
L3
L4
R1
R2
=
=
=
=
=
=
=
=
=
=
C2 = 10 to 780 pF film dielectric trimmer
C5 = C6 = 220 nF polyester capacitor
56 pF ceramic capacitor (500 V)
C8 = 15 to 575 pF film dielectric trimmer
4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2
×
5 mm
Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2
×
5 mm
7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2
×
5 mm
1,2
; parallel connection of 4
×
4,7
carbon resistors
39
carbon resistor
Fig.10 Test circuit; s.s.b. class-AB.
handbook, full pagewidth
50
MGP594
50
L2
L1
R1
R2
L4
T.U.T.
L3
C7
C8
C4
+
VCC
C5
C6
C1
C2
C3
temperature
compensated bias
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