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參數(shù)資料
| 型號(hào)： | BLW77 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁(yè)數(shù)： | 2/17頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | BLW77 |
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August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Transistors are
delivered in matched h
FE
groups.
The transistor has a
1
2
" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C
Note
1.
At 130 W P.E.P.
MODE OF OPERATION
V
CE
V
I
C(ZS)
A
f
MHz
1,6
28
P
L
W
G
p
dB
>
12
η
%
d
3
dB
s.s.b. (class-AB)
28
0,1
15
130
(P.E.P.)
130
>
37,5
(1)
<
30
c.w. (class-B)
28
87,5
typ. 7,5
typ. 75
PIN CONFIGURATION
Fig.1 Simplified outline. SOT121B.
handbook, halfpage
MLA876
4
3
2
1
PINNING - SOT121B.
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW78 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW80 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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