參數(shù)資料
型號: BLW77
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-121B, 4 PIN
文件頁數(shù): 12/17頁
文件大?。?/td> 117K
代理商: BLW77
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
Component layout and printed-circuit board for 87,5 MHz test circuit are shown in Fig.17.
f (MHz)
V
CE
(V)
28
P
L
(W)
130
P
S
(W)
typ.
23,2
G
p
(dB)
typ.
7,5
I
C
(A)
typ.
6,2
η
(%)
typ.
75
z
i
(
)
Y
L
(mS)
273
j42
87,5
0,62
+
j0,73
C1
C2
C3
C4
C5
C6
C7a
C7b
L1
L2
L3
L4
L6
L8
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
R1
=
10
(
±
10%) carbon resistor
R2
=
10
(
±
10%) carbon resistor
=
=
=
=
=
=
=
=
=
=
=
=
=
=
4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C9 = C10 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015)
C8 = 22 pF ceramic capacitor (500 V)
4
×
82 pF ceramic capacitors in parallel (500 V)
390 pF polystyrene capacitor
220 nF polyester capacitor
2
×
10 pF ceramic capacitors in parallel (500 V)
2
×
8,2 pF ceramic capacitors in parallel (500 V)
25 nH; 2 turns Cu wire (1,6 mm); int. dia. 5,0 mm; length 4,6 mm; leads 2
×
5 mm
L5 = 2,4 nH; strip (12 mm
×
6 mm); tap for L4 and L6 at 5 mm from transistor
L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
46 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,0 mm; leads 2
×
5 mm
44 nH; 2 turns Cu wire (2,0 mm); int. dia. 9,0 mm; length 6,7 mm; leads 2
×
5 mm
Fig.16 Test circuit; c.w. class-B.
handbook, full pagewidth
C9
50
50
MGP535
C1
C2
C3
C4
C5
C6
R2
R1
C8
C7ab
C10
L1
L2
L4
L3
L5
L8
T.U.T.
L6
L7
+
VCC
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