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參數(shù)資料
| 型號： | BLW60 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 86K |
| 代理商： | BLW60 |
March 1993
8
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
Fig.9
handbook, halfpage
PL
(W)
0
0
10
30
75
25
50
MGP486
20
PS (W)
Th = 70
°
C
Th = 25
°
C
f = 175 MHz
VCC = 12.5 V
VCC = 13.5 V
Fig.10
handbook, halfpage
10
30
50
Gp
(dB)
0
5
100
η
(%)
0
50
MGP487
PL (W)
η
Gp
typical values
f = 175 MHz
Th = 25
°
C
VCC = 12.5 V
VCC = 13.5 V
Fig.11
handbook, halfpage
1
1.1
1.2
1.3
PLnom
(W)
VSWR = 1
30
40
MGP488
10
20
50
VCC
VCCnom
PS
PSnom
VSWR =
5
Conditions for R.F. SOAR
f = 175 MHz
T
h
= 70
°
C
R
th mb-h
= 0,45 K/W
V
CCnom
= 12,5 V or 13,5 V
P
S
= P
Snom
at V
CCnom
and VSWR = 1
measured in circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
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| BLW60C | VHF power transistor |
| BLW76 | HF/VHF power transistor |
| BLW77 | HF/VHF power transistor |
| BLW78 | HF/VHF power transistor |
| BLW80 | UHF power transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW60C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW75 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW76 | 功能描述:射頻雙極電源晶體管 RF Bipolar Trans RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW77 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW78 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
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