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參數(shù)資料
| 型號： | BLW34 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear power transistor(UHF 線性功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BLW34 |
August 1986
9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
Fig.10 Bias circuit for class-A linear amplifier at
f
vision
= 860 MHz.
+
Vs
+
VCC
+
VBB
0
R9
R8
R7
TR1
C3
R5
R4
C2
C1
R3
R2
D1
R1
D2
C4
R6
MGP437
List of components:
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10
μ
F/25 V solid aluminium electrolytic capacitor
R1 = 150
carbon resistor (0,25 W)
R2 = 100
preset potentiometer (0,1 W)
R3 = 82
carbon resistor (0,25 W)
R4 = R5 = 2,2 k
carbon resistor (0,25 W)
R6 = 2,8
;
parallel connection of
2
×
5,6
carbon resistors (0,5 W each)
R7 = R8 = 820
carbon resistor (0,25 W)
R9 = 33
carbon resistor (0,25 W)
D1
= BZY88-C3V3
D2
= BY206
TR1
= BD136
Information for wideband application from 470 to 860 MHz available on request.
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
≤
75 dB.
Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (d
cm
) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
20 dB.
2.
Fig.11 Intermodulation distortion (d
im
)
(1.)
and cross-modulation distortion (d
cm
)
(2.)
as a function of output power.
Typical values; V
CE
= 25 V; I
C
= 600 mA; f
vision
= 860 MHz;
T
h
= 25
°
C;
T
h
= 70
°
C.
handbook, full pagewidth
6
70
0
2
MGP462
60
20
0
10
4
Po sync (W)
dim
(dB)
dcm
(%)
dcm
dim
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