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參數(shù)資料
| 型號： | BLW34 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear power transistor(UHF 線性功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BLW34 |
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
APPLICATION INFORMATION
Note
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
List of components:
f
vision
(MHz)
860
860
860
V
CE
(V)
25
25
25
I
C
(mA)
600
600
600
T
h
(
°
C)
70
70
25
d
im
(dB)
(1)
60
60
60
P
o sync
(W)
(1)
>
typ.
typ.
G
p
(dB)
1,8
1,9
2,15
>
typ.
typ.
9
10,2
10,2
C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm
respectively from transistor edge
C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50)
C7 = C10 = 1 nF chip capacitor
C8 = 100 nF polyester capacitor
C9 = C12 = 470 nF polyester capacitor
C11 = 10 nF polyester capacitor
C13 = 3,3
μ
F/40 V solid aluminium electrolytic capacitor
L1 = stripline (9,2 mm
×
7,0 mm)
L2 = stripline (14,2 mm
×
7,0 mm)
L3 = micro choke 0,47
μ
H (cat. no. 4322 057 04770)
L4 = stripline (see Fig.9 printed-circuit board layout)
L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm
L6 = stripline (41,0 mm
×
7,0 mm)
L7 = stripline (8,7 mm
×
7,0 mm)
L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(
ε
r
= 2,74); thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
Fig.8 Test circuit at f
vision
= 860 MHz.
handbook, full pagewidth
MGP460
+
VBB
+
VCC
50
L1
L2
T.U.T.
C1
C3
L3
L5
C7
C8
C9
C10
C11
C12
C13
C4
C6
C2
L7
C5
L6
L4
50
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