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參數(shù)資料
| 型號(hào)： | BLW34 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF Linear power transistor(UHF 線性功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | BLW34 |
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Notes
1.
2.
Measured under pulse conditions: t
p
≤
300
μ
s;
δ ≤
0,02.
Measured under pulse conditions: t
p
≤
50
μ
s;
δ ≤
0,01.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 8 mA
open base; I
C
= 60 mA
Emitter-base breakdown voltage
open collector; I
E
= 4 mA
Collector cut-off current
V
BE
= 0; V
CE
= 30 V
V
BE
= 0; V
CE
= 30 V; T
j
= 175
°
C
D.C. current gain
I
C
= 600 mA; V
CE
= 25 V
V
(BR)CES
V
(BR)CEO
>
>
50 V
30 V
V
(BR)EBO
>
4 V
I
CES
I
CES
<
<
2,0 mA
5,0 mA
>
typ.
20
40
h
FE
I
C
= 600 mA; V
CE
= 25 V; T
j
= 175
°
C
Collector-emitter saturation voltage
(1)
I
C
= 1,2 A; I
B
= 0,12 A
Transition frequency at f = 500 MHz
(2)
I
E
= 0,6 A; V
CB
= 25 V
I
E
= 1,2 A; V
CB
= 25 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
Feedback capacitance at f = 1 MHz
I
C
= 40 mA; V
CE
= 25 V
Collector-stud capacitance
h
FE
<
120
V
CEsat
typ.
450 mV
f
T
f
T
typ.
typ.
3,3 GHz
3,0 GHz
C
c
typ.
13,5 pF
C
re
C
cs
typ.
typ.
8,4 pF
1,2 pF
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