參數(shù)資料
型號(hào)： BLW33
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF Linear power transistor(UHF 線性功率晶體管)
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-122A, 4 PIN
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 81K
代理商： BLW33
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
APPLICATION INFORMATION
Note
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
List of components:
f
vision
(MHz)
860
860
860
V
CE
(V)
25
25
25
I
C
(mA)
300
300
300
T
h
(
°
C)
70
70
25
d
im
(dB)
(1)
60
60
60
P
o sync
(W)
(1)
>
typ.
typ.
G
P
(dB)
1,0
1,07
1,15
>
typ.
typ.
10
10,5
10,5
C1 = C3 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 8 mm
and 46 mm respectively from transistor edge
C4 = C5 = 4,3 pF multilayer ceramic chip capacitor (ATC 100A-4R3-C-PX-50)
C7 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3
μ
F/40 F solid aluminium electrolytic capacitor
L1 = stripline (5,2 mm
×
4,5 mm)
L2 = stripline (13,2 mm
×
4,5 mm)
L3 = stripline (15,0 mm
×
4,5 mm)
L4 = micro choke 0,47
μ
H (cat. no. 4322 057 04770)
L5 = stripline (see Fig.9 printed-circuit board layout)
L6 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2
×
4 mm
L7 = stripline (37,0 mm
×
4,5 mm)
L8 = stripline (13,5 mm
×
4,5 mm)
Fig.8 Test circuit at f
vision
= 860 MHz.
handbook, full pagewidth
50
MGP448
+
VBB
+
VCC
L1
L2
L3
T.U.T.
C1
C3
C4
L4
C9
C2
C10
C11
C12
C13
C14
C15
L6
C5
C8
C6
L8
C7
L7
L5
50
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