參數(shù)資料
型號: BLW33
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear power transistor(UHF 線性功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122A, 4 PIN
文件頁數(shù): 3/12頁
文件大小: 81K
代理商: BLW33
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation up to T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
max.
max.
max.
50 V
30 V
4 V
I
C
I
CM
P
tot
T
stg
T
j
max.
max.
max.
65 to
+
150
°
C
max.
1,25 A
1,9 A
19,3 W
200
°
C
Fig.2 D.C. SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
1
10
1
MGP442
1
10
10
2
IC
(A)
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
(1)
Fig.3 Power derating curve vs. temperature.
handbook, halfpage
Ptot
(W)
0
50
100
15
5
0
10
MGP443
Th (
°
C)
THERMAL RESISTANCE
(see Fig.4)
From junction to mounting base
(dissipation = 7,5 W; T
mb
= 74,5
°
C; i.e. T
h
= 70
°
C)
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
10,1 K/W
0,6 K/W
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