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參數(shù)資料
| 型號(hào)： | BLW33 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear power transistor(UHF 線性功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BLW33 |
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers
for television
transmitters and transposers. The
excellent d.c. dissipation
properties
for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a
1
4
" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
Note
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak sync level.
MODE OF OPERATION
f
vision
MHz
V
CE
V
I
C
mA
T
h
°
C
70
25
d
im
(1)
dB
60
60
P
o sync
(1)
W
>
typ.
G
p
dB
class-A; linear amplifier
860
860
25
25
300
300
1,0
>
1,15 typ.
10,0
10,5
PIN CONFIGURATION
Fig.1 Simplified outline. SOT122A.
handbook, halfpage
Top view
MBK187
3
1
2
4
PINNING - SOT122A.
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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