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參數(shù)資料
| 型號： | BLW31 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 27K |
| 代理商： | BLW31 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 200 mA
BV
CES
I
C
= 200 mA
BV
EBO
I
E
= 10 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 200 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
4.0
35
UNITS
V
V
V
mA
---
2.0
---
C
OB
V
CB
= 28 V
f = 1.0 MHz
250
pF
P
G
η
C
V
CC
= 28 V P
OUT
= 25 W f = 175 MHz
8.5
60
dB
%
NPN SILICON RF POWER TRANSISTOR
BLW31
DESCRIPTION:
The
ASI BLW31
is an NPN power
transistor, designed 108-175 MHz
applications. The device utilizes
diffused emitter resistors to achieve
good VSWR capability
FEATURES:
Common Emitter-Class-C
P
G
= 10 dB at 30 W/150 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
4.0 A
V
CBO
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
40 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
4.4 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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