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參數(shù)資料
| 型號： | BLX39 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 13K |
| 代理商： | BLX39 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 200 mA
BV
EBO
I
E
= 10 mA
I
CES
V
E
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
65
V
4.0
V
5
mA
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
65
pF
P
G
η
C
V
CE
= 28 V
P
IN
= 7.0 W f = 175 MHz
7.6
60
dB
%
NPN SILICON RF POWER TRANSISTOR
BLX39
DESCRIPTION:
The
ASI BLX39
is Designed for
broadband amplifier operations up to
175 MHz.
FEATURES:
P
G
= 7.6 dB min. at 40 W/175 MHz
Emitter Resistors Ballasted
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
5.0 A
65 V
35 V
60 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.9 °C/W
PACKAGE STYLE .380 STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E
E
C
B
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