參數(shù)資料
型號: BLV935
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-273, 6 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 85K
代理商: BLV935
1995 Jun 29
5
Philips Semiconductors
Product specification
UHF power transistor
BLV935
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter, class-AB test circuit; R
th mb-h
= 0.3 K/W.
Ruggedness in class-AB operation
The BLV935 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 100 mA; T
h
= 25
°
C; R
th mb-h
= 0.3 K/W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
9
typ. 10
η
C
(%)
55
typ. 60
CW, class-AB
960
26
100
30
Fig.6
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V.
I
CQ
= 100 mA.
f = 960 MHz.
handbook, halfpage
Gp
(dB)
0
20
10
50
0
MLD142
40
30
8
PL
80
40
60
20
0
4
12
η
(%)
Gp
η
V
CE
= 26 V.
I
CQ
= 100 mA.
f = 960 MHz.
Fig.7
Load power as a function of input power;
typical values.
handbook, halfpage
(W)
0
2
4
6
8
10
30
40
10
0
20
MLD143
Pi
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