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參數資料
| 型號： | BLV935 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-273, 6 PIN |
| 文件頁數： | 4/12頁 |
| 文件大小： | 85K |
| 代理商： | BLV935 |
1995 Jun 29
4
Philips Semiconductors
Product specification
UHF power transistor
BLV935
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured under pulsed conditions: t
p
≤
500
μ
s;
δ ≤
0.01.
C
C
value is that of the die only; it is not measurable because of internal matching network.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 20 mA
70
V
V
(BR)CEO
open base; I
C
= 50 mA
30
V
V
(BR)EBO
open collector; I
E
= 1 mA
3
V
I
CES
h
FE
C
c
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 1.5 A; note 1
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz;
note 2
V
CE
= 26 V; I
C
= 0; f = 1 MHz
30
25
2
120
mA
pF
C
re
feedback capacitance
17
pF
Fig.4
DC current gainas a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
500
μ
s;
δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
handbook, halfpage
hFE
0
40
60
20
80
0
1
2
3
4
5
6
IC(A)
MLC680
(2)
(1)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
C
value is that of the die only; it is not measurable because of
internal matching network.
f = 1 MHz.
handbook, halfpage
0
20
80
60
40
0
10
20
30
40
50
(pF)
VCB(V)
MLC681
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