參數(shù)資料
型號: BLV935
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-273, 6 PIN
文件頁數(shù): 2/12頁
文件大小: 85K
代理商: BLV935
1995 Jun 29
2
Philips Semiconductors
Product specification
UHF power transistor
BLV935
FEATURES
Emitter ballasting resistors for an optimum temperature
profile
Gold metallization ensures excellent reliability
Internal input matching to achieve high power gain and
easy design of wideband circuits.
APPLICATIONS
Base stations in the 820 to 980 MHz range.
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT273 flange envelope with
a ceramic cap. All leads are isolated from the flange.
PINNING - SOT273
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
c
b
e
e
emitter
emitter
collector
base
emitter
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
5
2
4
6
Top view
e
c
b
MAM033
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
9
η
C
(%)
55
CW, class-AB
960
26
30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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