參數(shù)資料
型號(hào): BLV910
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: UHF power transistor(UHF 功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171, 6 PIN
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 95K
代理商: BLV910
1995 Apr 11
9
Philips Semiconductors
Product specification
UHF power transistor
BLV910
Fig.10 Input impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V.
I
CQ
= 25 mA.
T
mb
= 25
°
C.
P
L
= 10 W.
handbook, halfpage
(
)
800
840
880
1000
0
8
MLC666
920
960
6
4
2
f (MHz)
xi
ri
Fig.11 Load impedance as a function of frequency
(series components); typical values.
V
CE
= 26 V.
I
CQ
= 25 mA.
T
mb
= 25
°
C.
P
L
= 10 W.
handbook, halfpage
(
)
800
840
880
920
1000
0
8
MLC667
960
6
4
2
f (MHz)
RL
XL
Fig.12 Power gain as a function of frequency;
typical values.
V
CE
= 26 V.
I
CQ
= 25 mA.
T
mb
= 25
°
C.
P
L
= 10 W.
handbook, halfpage
800
840
880
920
1000
10
MLC668
960
12
11
G
f (MHz)
p
(dB)
Fig.13 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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