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參數(shù)資料
| 型號： | BLV910 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171, 6 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 95K |
| 代理商： | BLV910 |
1995 Apr 11
4
Philips Semiconductors
Product specification
UHF power transistor
BLV910
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 5 mA
70
V
V
(BR)CEO
open base; I
C
= 15 mA
30
V
V
(BR)EBO
open collector; I
E
= 0.3 mA
3
V
I
CES
h
FE
C
c
C
re
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 0.5 A;
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 26 V; I
C
= 0; f = 1 MHz
30
10
6
0.75
120
mA
pF
pF
Fig.4
DC current gainas a function of collector
current; typical values.
(1) V
CE
= 26 V: measured under pulsed conditions;
t
p
≤
500
μ
s;
δ <
0.01.
(2) V
CE
= 10 V.
handbook, halfpage
hFE
0
40
60
20
80
0
0.5
1.0
1.5
2.0
2.5
IC(A)
MLC660
(1)
(2)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
Cc
0
10
30
20
0
10
20
30
40
50
(pF)
VCB(V)
MLC661
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|---|---|
| BLV920 | UHF power transistor(UHF 功率晶體管) |
| BLV92 | UHF power transistor |
| BLV934 | UHF power transistor |
| BLV935 | UHF power transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV92 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV920 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV93 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV934 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV935 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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